Hence the device exhibits conductance oscillations as a function of gate voltage, V g, with a well-defined CB periodicity ( P CB = e/ C G) equal to the ratio of an electron charge e to a gate capacitance C G.
Each time a single electron is added, the current is blocked due to Coulomb blockade (CB) effect 1, 2, 3, 4, 5. The current through the nanostructure can be tuned via the gate voltage which controls the number of electrons in the SET. Electrons are confined to a small volume and their number in the nanostructure is quantized.
Single-electron transistors (SETs) are based on a nanostructure such as a nanoparticle, molecule, or a quantum dot, which is resistively coupled to the source and drain leads and capacitively coupled to a gate electrode.
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